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| Ordering number : ENN7380 2SB1700 / 2SD2663 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1700 / 2SD2663 Driver Applications Applications * Package Dimensions unit : mm 2042B 8.0 1.0 4.0 1.0 Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. [2SB1700 / 2SD2663] 1.4 Features * * * 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 High DC current gain. Large current capacity and wide ASO. Micaless package facilitating mounting. 3.3 0.7 1 2 3 ( ) : 2SB1700 1 : Emitter 2 : Collector 3 : Base 1.7 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C 2.4 4.8 SANYO : TO-126ML Conditions Ratings (--)110 (-)100 (-)6 (-)3 (-)5 1.5 10 150 --55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)5V, IC=0 Ratings min typ max (--)0.1 (--)3.0 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1003 TS IM TA-100279, 100280 No.7380-1/4 2SB1700 / 2SD2663 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO ton tstg tf Conditions VCE=(--)3V, IC=(-)1.5A VCE=(--)5V, IC=(-)1.5A IC=(--)1.5A, IB=(--)3mA IC=(--)1.5A, IB=(--)3mA IC=(--)5mA, IE=0 IC=(--)50mA, RBE= See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-)110 (--)100 (0.8)0.7 (2.4)5.0 1.2 Ratings min 1500 typ 4000 20 (-1.0)0.9 (--)1.5 (--)2.0 MHz V V V V s s s max Unit Specified Test Circuit (For PNP, the polarity is reversed.) PW=50s, Duty Cycle1% 500IB1= --500IB2=IC=1A TUT INPUT RB RL 50 50 VR + 100F VBE= --5V + 470F VCC=50V OUTPUT Electrical Connection C B 6k 200 2SB1700 C E B 6k 200 2SD2663 E --2.5 IC -- VCE 2SB1700 --500A --450A --400A --350A --300A --250A Collecotr Current, IC -- A 2.5 IC -- VCE 2SD2663 Collecotr Current, IC -- A --2.0 2.0 500A 450A 400A 350A 300A --1.5 1.5 250A 1.0 --1.0 --200A 200A 150A IB=0 0 1 2 3 4 5 6 7 8 9 10 --150A --0.5 0.5 0 0 --1 --2 --3 --4 --5 --6 --7 IB=0 --8 --9 --10 0 IT04729 6 Collector-to-Emitter Voltage, VCE -- V --6 IC -- VCE Collector-to-Emitter Voltage, VCE -- V IT04730 IC -- VCE --5 Collecotr Current, IC -- A Collecotr Current, IC -- A --4 From top --5.0mA --4.5mA --4.0mA --3.5mA --3.0mA --2.5mA --2.0mA 2SB1700 5 4 --1.5mA --1.0mA From top 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 2SD2663 1.5mA 1.0mA --3 3 --2 2 --1 1 0 0 --1 --2 --3 --4 --5 IB=0 --6 --7 --8 --9 --10 0 0 1 2 3 4 5 6 IT04731 IB=0 7 8 9 10 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V IT04732 No.7380-2/4 2SB1700 / 2SD2663 --3.5 IC -- VBE 2SB1700 VCE= --3V 3.5 IC -- VBE 2SD2663 VCE=3V --3.0 3.0 Collector Current, IC -- A --2.5 Collector Current, IC -- A 2.5 --2.0 2.0 20C --1.5 1.5 25C --40C Ta= 1 0C 25C 1.2 --1.0 1.0 --0.5 0 --0.4 0.5 0 0.4 --0.8 --1.2 --1.6 --2.0 --2.4 IT04733 0.8 Ta=1 2 1.6 --40C 2.0 2.4 IT04734 Base-to-Emitter Voltage, VBE -- V 2 hFE -- IC Base-to-Emitter Voltage, VBE -- V 2 hFE -- IC C 10000 7 2 Ta=1 0C 2SB1700 VCE= --3V 10000 7 1 Ta= 20 2SD2663 VCE=3V DC Current Gain, hFE DC Current Gain, hFE 5 3 2 5 3 2 C 25 --40 C 25 C 1000 7 5 3 2 --100 2 3 5 7 --1000 2 3 5 IT04735 1000 7 5 3 2 100 2 3 5 C --40 7 1000 2 3 5 IT04736 Collector Current, IC -- mA 5 VCE(sat) -- IC Collector Current, IC -- mA 5 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB1700 IC / IB=500 2SD2663 IC / IB=500 3 2 2 --1.0 Ta= --40C 1.0 Ta= --40C 25C 7 5 25C 7 5 120C 120C 3 --100 2 3 5 7 --1000 2 3 5 IT04737 3 100 2 3 5 7 1000 2 3 5 IT04738 Collector Current, IC -- mA 5 Collector Current, IC -- mA 5 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SB1700 IC / IB=500 VBE(sat) -- IC 2SD2663 IC / IB=500 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 3 2 Ta= --40C 2 Ta= --40C 25C 120C 25C 1.0 --1.0 120C 7 5 --100 7 5 100 2 3 5 7 --1000 2 3 5 IT04739 2 3 5 7 1000 3 5 IT04740 Collector Current, IC -- mA Collector Current, IC -- mA No.7380-3/4 2SB1700 / 2SD2663 10 7 5 ASO ICP=5A IC=3A s 1m ms 2SB1700 / 2SD2663 10 2.0 PC -- Ta 2SB1700 / 2SD2663 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 s 1.5 10 s 0m 10 DC operation Ta=25C 1.0 DC operation Tc=25C 100s to 100ms : Single pulse For PNP, minus sign is omitted 2 3 5 7 1.0 2 3 5 7 10 2 3 0.5 0.01 0.1 0 5 7 100 2 V IT04741 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -12 Ambient Temperature, Ta -- C IT04742 PC -- Tc 2SB1700 / 2SD2663 Collector Dissipation, PC -- W 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT05888 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.7380-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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